2SD1154 查看數據表（PDF） - Inchange Semiconductor

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2SD1154

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD1154

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0

200

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 5mA ; IC= 0

6

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.4A

VBE(sat) Base-Emitter Saturation Voltage

IC= 4A; IB=B 0.4A

ICES

Collector Cutoff Current

VCE= 350V; VBE= 0

VCE= 350V; VBE= 0;TC= 100℃

1

V

1.2

V

0.1

mA

1

IEBO

Emitter Cutoff Current

VEB= 6V; IC= 0

5

mA

hFE

DC Current Gain

tf

Fall Time

IC= 5A ; VCE= 4V

IC= 5A;IB= 0.5A;VBB= -5V;RB= 0.5Ω

11

36

0.75

μs

‹ hFE Classifications

R

Q

P

11-15 11-22 18-36

isc Website：www.iscsemi.cn

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