2SD1191 查看數據表（PDF） - Inchange Semiconductor
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2SD1191 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1191
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞
60
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
70
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 7mA
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 3.5A; IB= 7mA
VCB= 40V; IE= 0
2.0
V
100 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
3.0
mA
hFE
DC Current Gain
IC= 3.5A; VCE= 2V
2000
fT
Current-Gain—Bandwidth Product
IC= 3.5A; VCE= 5V
20
MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
0.6
μs
IC= 3A, IB1= -IB2= 6mA
RL= 6.7Ω; VCC= 20V;
3.0
μs
PW= 50μs; Duty Cycle≤1%
1.7
μs
isc Website：www.iscsemi.cn
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