2SD1420 查看數據表（PDF） - Renesas Electronics

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2SD1420

Silicon NPN Epitaxial

Renesas Electronics 

2SD1420

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

VCBO

VCEO

VEBO

IC

i *1

C(peak)

PC * 2

Tj

180

120

5

1.5

3

1

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%

2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)

Unit

V

V

V

A

A

W

°C

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 180 —

voltage

Collector to emitter breakdown V(BR)CEO 120 —

voltage

Emitter to base breakdown

V(BR)EBO

5

—

voltage

Collector cutoff current

I CBO

—

—

DC current transfer ratio

hFE1*1

60

—

hFE2

30

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter voltage

VBE

—

—

Note: 1. The 2SD1420 is grouped by hFE1 as follows.

Mark

EA

EB

EC

hFE1

60 to 120 100 to 200 160 to 320

Max Unit

—

V

—

V

—

V

10

µA

320

—

1.0 V

0.9 V

Test conditions

IC = 1 mA, IE = 0

IC = 10 mA, RBE = ∞

IE = 1 mA, IC = 0

VCB = 160 V, IE = 0

VCE = 5 V, IC = 0.15 A

VCE = 5 V, IC = 0.5 A

IC = 0.5 A, IB = 50 mA, Pulse

VCE = 5 V, IC = 0.15 A, Pulse

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