D1294 查看數據表（PDF） - Inchange Semiconductor

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D1294

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1294

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO

Collector-emitter breakdown voltage IC=100mA ;IB=0

45

75

V

VCBO

Collector-base breakdown voltage

IC=100mA ;IE=0

45

75

V

VCEsat-1 Collector-emitter saturation voltage IC=0.5A ;IB=1mA

1.5

V

VCEsat-2 Collector-emitter saturation voltage IC=1A; IB=1mA

2.5

V

VBE

Base-emitter on voltage

IC=0.5A;VCE=5V

1.8

V

IEBO

Emitter cut-off current

VEB=6V; IC=0

0.1

mA

hFE

DC current gain

IC=0.5A ; VCE=5V

2000

20000

固电半导体

INCHANGE

SEMICONDUCTOR

2

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