2SD2101 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SD2101

Silicon NPN Triple Diffused

Hitachi -> Renesas Electronics 

2SD2101

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at TC = 25°C.

Symbol

VCBO

VCEO

VEBO

IC

I C(peak)

PC

PC * 1

Tj

Tstg

Rating

Unit

200

V

200

V

7

V

10

A

15

A

2

W

30

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 200 —

voltage

Collector to emitter breakdown V(BR)CEO 200 —

voltage

Collector to emitter sustain

voltage

VCEO(SUS) 170

—

Emitter to base breakdown

V(BR)EBO

7

—

voltage

Collector cutoff current

DC current transfer ratio

Collector to emitter saturation

voltage

Base to emitter saturation

voltage

Note: 1. Pulse test.

I CBO

I CEO

hFE

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

—

—

—

—

1500 —

—

—

—

—

—

—

—

—

Max Unit

—

V

—

V

—

V

—

V

10

µA

50

—

1.5 V

3.0

2.0 V

3.5

Test conditions

IC = 0.1 mA, IE = 0

IC = 25 mA, RBE = ∞

IC = 5 A, L = 5 mH

IE = 50 mA, IC = 0

VCB = 180 V, IE = 0

VCE = 180 V, RBE = ∞

VCE = 3 V, IC = 5 A*1

IC = 5 A, IB = 10 mA*1

IC = 10 A, IB = 100 mA*1

IC = 5 A, IB = 10 mA*1

IC = 10 A, IB = 100 mA*1

2

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