2SD2155 查看數據表（PDF） - Inchange Semiconductor
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2SD2155 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=8A ;IB=0.8A
VBE
Base-emitter voltage
IC=6A ; VCE=5V
ICBO
Collector cut-off current
VCB=180V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=5V
COB
Collector output capacitance
IC=0; f=1MHz;VCB=10V
hFE-1 classifications
R
O
55-110
80-160
Product Specification
2SD2155
MIN TYP. MAX UNIT
180
V
2.0
V
1.5
V
5
μA
5
μA
55
160
30
10
MHz
160
pF
2
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