2SD468
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
P
C =0.9W
1,000
300
100
Typical Transfer Characteristics
VCE=2V
Ta=75℃
25℃
30
10
3
1
0 0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage, VBE (V)
5,000
2,000
1,000
500
200
100
50
20
10
5
1
DC Current Transfer Ratio
vs. Collector Current
VCE=2V
Ta=75℃
25℃
3 10 30 100 300 1,000
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R211-003.B