2SD568 查看數據表（PDF） - Inchange Semiconductor
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2SD568 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD568
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 0.5A
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 3A; VCE= 1V
hFE-2
DC Current Gain
IC= 5A; VCE= 1V
MIN TYP. MAX UNIT
60
V
0.5
V
1.5
V
10
μA
10
μA
40
200
20
hFE-1 Classifications
M
L
K
40-80 60-120 100-200
isc Website：www.iscsemi.cn
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