D725 查看數據表（PDF） - Inchange Semiconductor
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D725 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD725
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0
600
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
5
V
VCEsat Collector-emitter saturation voltage IC=5 A;IB=1 A
5.0
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IC=5 A;IB=1 A
VCB=800V;IE=0
1.5
V
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE-1
hFE-2
DC current gain
固IN电C半H导AN体GE SEMICONDUTOR DC current gain
IC=1A ; VCE=5V
IC=5A ; VCE=5V
8
36
5
2
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