D727 查看數據表（PDF） - Inchange Semiconductor
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D727 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD727
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
130
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
5
V
VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A
2.5
V
ICBO
Collector cut-off current
VCB=130V; IE=0
0.1 mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1 mA
hFE-1
DC current gain
IC=1A ; VCE=5V
60
200
hFE-2
DC current gain
IC=4A ; VCE=5V
20
fT
COB
Transition frequency
IC=1A ; VCE=5V
7
固IN电C半H导AN体GE SEMICONDUTOR Collector output capacitance
IE=0 ;f=1MHz;VCB=10V
110
MHz
pF
2
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