D986 查看數據表（PDF） - Inchange Semiconductor
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D986 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD985 2SD986
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEsat Collector-emitter saturation voltage IC=1.0A; IB=1.0mA
1.5
V
VBEsat Base-emitter saturation voltage
IC=1.0A; IB=1.0mA
2.0
V
2SD985 VCB=60V; IE=0
ICBO
Collector cut-off current
2SD986 VCB=80V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
2.0
mA
hFE-1
DC current gain
IC=0.5A ; VCE=2V
1000
hFE-2
DC current gain
IC=1.0A ; VCE=2V
2000
30000
Switching times
固IN电C半H导AN体GE SEMICONDUTOR ton
Turn-on time
ts
Storage time
tf
Fall time
0.5
IC=1.0A;IB1=-IB2=1.0mA
VCC=50V; RL=50Ω
1.0
1.0
μs
μs
μs
hFE-2 Classifications
M
L
K
2000-5000 4000-10000 8000-30000
2
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