2SJ471 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SJ471

Silicon P Channel DV–L MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ471

Silicon P Channel DV–L MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 25 mΩ typ.

• 4V gate drive devices.

• High speed switching

Outline

TO–220CFM

ADE-208-540

1st. Edition

D

G

123

S

1. Gate

2. Drain

3. Source

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