2SJ471
1000
500
200
100
50
Body to Drain Diode Reverse
Recovery Time
20
10
di / dt = 50 A / µs
5
VGS = 0, Ta = 25 °C
–0.1–0.2 –0.5 –1 –2 –5 –10 –20 –50
Reverse Drain Current I DR (A)
10000
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
Ciss
1000
Coss
500
200
100
0
VGS = 0
f = 1 MHz
–4 –8
Crss
–12 –16 –20
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
0
0
V DD = –5 V
–10 V
–10
–25 V
–4
–20
VGS
–30 VDS
V DD = –25 V
–10 V
–40
–5 V
–50 I D = –30 A
0
16 32 48 64
Gate Charge Qg (nc)
–8
–12
–16
–20
80
1000
Switching Characteristics
500
t d(off)
200
100
tr
tf
50
t d(on)
20
10
VGS = –10 V, V DD = –10 V
5
duty < 1 %
–0.1–0.2 –0.5 –1 –2 –5 –10 –20 –50
Drain Current I D (A)
6