2SK1155 查看數據表（PDF） - Hitachi -> Renesas Electronics

零件编号

产品描述 (功能)

生产厂家

2SK1155

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK1155, 2SK1156

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

2SK1155

2SK1156

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at TC = 25°C

Symbol

VDSS

VGSS

ID

I *1

D(pulse)

I DR

Pch*2

Tch

Tstg

Ratings

Unit

450

V

500

±30

V

5

A

20

A

5

A

50

W

150

°C

–55 to +150

°C

2

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