BF862 查看數據表（PDF） - Philips Electronics
零件编号
产品描述 (功能)
生产厂家
BF862 Datasheet PDF : 7 Pages
| |||
Philips Semiconductors
N-channel junction FET
Preliminary specification
BF862
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
VDS
VDG
VGS
IDS
IG
Ptot
Tstg
Tj
PARAMETER
drain-source voltage
drain-gate voltage
gate-source voltage
drain-source current
forward gate current
total power dissipation
storage temperature
junction temperature
CONDITIONS
Ts ≤ 92 °C
MIN.
−
−
−
−
−
−
−65
−
MAX.
20
20
−20
40
10
225
+150
150
UNIT
V
V
V
mA
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
Notes
1. Soldering point of the gate lead.
CONDITIONS
note 1
VALUE
260
UNIT
K/W
handboo2k,5h0alfpage
Ptot
(mW)
200
150
100
50
0
0
40
MGS298
80
120
160
Ts (°C)
Fig.2 Power derating curve.
1999 Jun 29
3
Share Link: 