2SK2765 查看數據表（PDF） - Fuji Electric
零件编号
产品描述 (功能)
生产厂家
2SK2765 Datasheet PDF : 2 Pages
| |||
N-channel MOS-FET
800V 2Ω 7A 125W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
2SK2765-01
FAP-IIS Series
Drain-Source-On-State Resistance vs. Tch
RDS(on) = f(Tch); ID=3,5A; VGS=10V
Typical Transfer Characteristics
ID=f(VGS); 80µs pulse test;VDS=25V; Tch=25°C
↑
1
↑
2
↑
3
→ VDS [V]
Typical Drain-Source-On-State-Resistance vs. ID
RDS(on)=f(ID); 80µs pulse test; TC=25°C
→ Tch [°C]
Typical Forward Transconductance vs. ID
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
→ VGS [V]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch); ID=1mA; VDS=VGS
↑
4
↑
5
↑
6
→ ID [A]
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
↑
7
→ ID [A]
Avalanche Energy Derating
Eas=f(starting Tch); VCC=80V; IAV=7A
↑
8
→ Tch [°C]
Forward Characteristics of Reverse Diode
IF=f(VSD); 80µs pulse test; VGS=0V
↑
9
→ VDS [V]
Allowable Power Dissipation vs. TC
PD=f(Tc)
↑
10
↑
→ Starting Tch [°C]
Safe operation area
ID=f(VDS): D=0,01, Tc=25°C
↑
12
→ VSD [V]
Transient Thermal impedance
Zthch=f(t) parameter:D=t/T
→ Tc [°C]
→ VDS [V]
This specification is subject to change without notice!
t [s] →
Share Link: 