2SK2926 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SK2926

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown V(BR)DSS

60

voltage

Gate to source breakdown V(BR)GSS

±20

voltage

Zero gate voltege drain

I DSS

—

current

Gate to source leak current IGSS

—

Gate to source cutoff voltage VGS(off)

1.5

Static drain to source on state RDS(on)

—

resistance

RDS(on)

—

Forward transfer admittance |yfs|

7

Input capacitance

Ciss

—

Output capacitance

Coss

—

Reverse transfer capacitance Crss

—

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note: 1. Pulse test

2SK2926(L), 2SK2926(S)

Typ

Max

Unit

—

—

V

—

—

V

—

10

µA

—

±10

µA

—

2.5

V

0.042 0.055 Ω

0.065 0.11 Ω

11

—

S

500

—

pF

260

—

pF

110

—

pF

10

—

ns

80

—

ns

100

—

ns

110

—

ns

1.0

—

V

55

—

ns

Test Conditions

ID = 10mA, VGS = 0

IG = ±100µA, VDS = 0

VDS = 60 V, VGS = 0

VGS = ±16V, VDS = 0

ID = 1mA, VDS = 10V

ID = 8A, VGS = 10V*1

ID = 8A, VGS = 4V*1

ID = 8A, VDS = 10V*1

VDS = 10V

VGS = 0

f = 1MHz

VGS = 10V, ID = 8A

RL = 3.75Ω

IF = 15A, VGS = 0

IF = 15A, VGS = 0

diF/ dt = 50A/µs

3

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