2SK2926 查看數據表（PDF） - Hitachi -> Renesas Electronics

零件编号

产品描述 (功能)

生产厂家

2SK2926

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

Reverse Drain Current vs.

Source to Drain Voltage

50

40

10 V

30

5V

VGS = 0, –5 V

20

10

Pulse Test

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage VSD (V)

2SK2926(L), 2SK2926(S)

Maximum Avalanche Energy vs.

Channel Temperature Derating

200

I AP = 40 A

160

V DD = 25 V

duty < 1 %

Rg > 50 Ω

120

80

40

0

25 50 75 100 125 150

Channel Temperature Tch (°C)

Vin

15 V

Avalanche Test Circuit

V DS

Monitor

Rg

50 Ω

L

I AP

Monitor

D. U. T

VDD

Avalanche Waveform

EAR =

1

2

• L • I AP2•

VDSS

VDSS – V DD

I AP

ID

V(BR)DSS

VDS

VDD

0

7

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