2SK3147S 查看數據表（PDF） - Renesas Electronics

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2SK3147S

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

2SK3147(L), 2SK3147(S)

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS =0.1 Ω typ.

• High speed switching

• 4 V gate drive device can be driven from 5 V source

Outline

REJ03G1072-0200

(Previous: ADE-208-731)

Rev.2.00

Sep 07, 2005

RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C

(Package name: DPAK(L)-(2))

(Package name: DPAK(S))

4

4

D

G

12 3

1. Gate

2. Drain

3. Source

4. Drain

1

23

S

Rev.2.00 Sep 07, 2005 page 1 of 8

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