2SK3147S 查看數據表（PDF） - Renesas Electronics
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2SK3147S Datasheet PDF : 9 Pages
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2SK3147(L), 2SK3147(S)
Static Drain to Source on State
Resistance vs. Temperature
0.50
Pulse Test
0.40
0.30
0.20
VGS = 4 V
1, 2 A
5A
0.10
0
–40
10 V
5A
1, 2 A
0
40 80 120 160
Case Temperature TC (°C)
1000
500
Body to Drain Diode Reverse
Recovery Time
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
200
100
50
20
10
0.1 0.3 1 3
10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
200
20
ID = 5 A
160
VDD = 100 V
50 V
16
25 V
120
VDS
80
12
VGS
8
40
VDD = 100 V
4
50 V
25 V
0
0
8
16 24 32 40
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
20
Tc = –25°C 25°C
10
5
75°C
2
1
VDS = 10 V
Pulse Test
0.5
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
5000
Typical Capacitance
vs. Drain to Source Voltage
2000
1000
500
Ciss
200
100
50
20 VGS = 0
f = 1 MHz
10
0
10
20
Coss
Crss
30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
300
td(off)
100
tf
30
tr
10
3
1
0.1 0.3
td(on)
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %
1
3 10 30 100
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 8
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