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零件编号
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2SK3566 查看數據表(PDF) - Hitachi -> Renesas Electronics
零件编号
产品描述 (功能)
生产厂家
2SK3566
Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
Hitachi -> Renesas Electronics
2SK3566 Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
2
COMMON
8
SOURCE
6
Tc
=
25°C
10
5.5
5.25
1.6
PULSE TEST
1.2
5
0.8
4.75
0.4
4. 5
VGS
=
4 V
0
0
4
8
12
16
20
24
DRAIN-SOURCE VOLTAGE V
DS
(V)
2SK3566
I
D
– V
DS
3
COMMON
SOURCE
2.5 Tc
=
25°C
PULSE TEST
10
8
6
5.5
2
5.25
1.5
5
1
4.75
0.5
4. 5
VGS
=
4 V
0
0
12
24
36
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
D
– V
GS
5
COMMON SOURCE
4
VDS
=
20 V
PULSE TEST
3
2
100
Tc
= −
55°C
1
25
0
0
2
4
6
8
10
12
GATE-SOURCE VOLTAGE V
GS
(V)
V
DS
– V
GS
40
COMMON SOURCE
Tc
=
25
℃
PULSE TEST
30
20
ID
=
2.5 A
10
1.5
0.8
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE V
GS
(V)
⎪
Y
fs
⎪
– I
D
10
1
0.1
0.01
0.01
Tc
= −
55°C
25
100
1
COMMON SOURCE
VDS
=
20 V
PULSE TEST
0.1
1
10
DRAIN CURRENT I
D
(A)
R
DS (ON)
– I
D
100
COMMON SOURCE
Tc
=
25°C
PULSE TEST
10
VGS
=
10 V
1
0.01
0.1
1
10
DRAIN CURRENT I
D
(A)
3
2005-01-24
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