2N7002WT1G(2012) 查看數據表（PDF） - ON Semiconductor
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2N7002WT1G Datasheet PDF : 5 Pages
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2N7002W, 2V7002W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
IDSS
IGSS
VGS(TH)
VGS(TH)/TJ
VGS = 0 V,
VDS = 60 V
TJ = 25°C
TJ = 150°C
VGS = 0 V,
VDS = 50 V
TJ = 25°C
TJ = 150°C
VDS = 0 V, VGS = ±20 V
VDS = 0 V, VGS = ±10 V
VDS = 0 V, VGS = ±5.0 V
VGS = VDS, ID = 250 mA
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 500 mA
VGS = 4.5 V, ID = 200 mA
Forward Transconductance
gFS
VDS = 5 V, ID = 200 mA
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS = 0 V, f = 1 MHz,
VDS = 20 V
Total Gate Charge
QG(TOT)
Threshold Gate Charge
Gate−to−Source Charge
QG(TH)
QGS
VGS = 4.5 V, VDS = 10 V;
ID = 200 mA
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS, VGS = V (Note 3)
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
VGS = 10 V, VDD = 25 V,
ID = 500 mA, RG = 25 W
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 200 mA
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
3. Switching characteristics are independent of operating junction temperatures
TJ = 25°C
TJ = 85°C
Min Typ Max Units
60
71
V
mV/°C
1.0
mA
15
mA
100
nA
10
mA
±10
mA
450
nA
150
nA
1.0
2.5
V
4.0
mV/°C
1.19 1.6
W
1.33 2.5
530
mS
24.5
pF
4.2
2.2
0.7
nC
0.1
0.3
0.1
12.2
ns
9.0
55.8
29
0.8
1.2
V
0.7
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