31DQ10G 查看數據表（PDF） - Vishay Semiconductors

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31DQ10G

Schottky Rectifier, 3.3 A

Vishay Semiconductors 

31DQ09G, 31DQ10G

Vishay High Power Products Schottky Rectifier, 3.3 A

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

Maximum forward voltage drop

See fig. 1

VFM (1)

Maximum reverse leakage current

See fig. 2

IRM (1)

Typical junction capacitance

Typical series inductance

Maximum voltage rate of charge

CT

LS

dV/dt

Note

(1) Pulse width < 300 µs, duty cycle < 2 %

TEST CONDITIONS

3A

TJ = 25 °C

6A

3A

TJ = 125 °C

6A

TJ = 25 °C

TJ = 125 °C

VR = Rated VR

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C

Measured lead to lead 5 mm from package body

Rated VR

VALUES

0.85

0.97

0.69

0.80

0.1

3

110

9.0

10 000

UNITS

V

mA

pF

nH

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum junction and storage

temperature range

TJ, TStg

Maximum thermal resistance,

junction to ambient

RthJA

DC operation

Without cooling fin

Typical thermal resistance,

junction to lead

RthJL

DC operation

Approximate weight

Marking device

Case style C-16

VALUES

- 40 to 150

UNITS

°C

80

°C/W

34

1.2

g

0.042

oz.

31DQ09G

31DQ10G

www.vishay.com

2

For technical questions, contact: diodes-tech@vishay.com

Document Number: 93322

Revision: 06-Nov-08

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