74AHC1G125SE-7 查看數據表（PDF） - Diodes Incorporated.
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74AHC1G125SE-7 Datasheet PDF : 9 Pages
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74AHC1G125
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
Electrical Characteristics
Symbol Parameter Test Conditions
IOH = -50μA
VOH
High Level
Output Voltage IOH = -4mA
VCC
2V
3V
4.5V
3V
25ºC
-40ºC to 85ºC -40ºC to 125ºC
Unit
Min Typ. Max Min Max Min Max
1.9 2
1.9
1.9
2.9 3
2.9
2.9
4.4 4.5
4.4
4.4
V
2.58
2.48
2.40
IOH = -8mA
4.5V 3.94
3.8
3.70
IOL = 50μA
VOL
Low Level
Output Voltage IOL = 4mA
IOL = 8mA
2V
3V
4.5V
3V
4.5V
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
0.36
0.44
0.55
0.36
0.44
0.55
II Input Current VI = 5.5V or GND 0 to 5.5V
± 0.1
±1
±2
μA
Z State
IOZ Leakage
Current
VO =0 to 5.5V
5.5V
0.25
2.5
10
μA
ICC
Supply Current VI = 5.5V or GND
IO=0
5.5V
1
10
40
μA
Ci
Input
Capacitance
VI = VCC – or
GND
5.5V
2.0 10
10
10
pF
Thermal
θJA
Resistance
Junction-to-
Ambient
SOT25
SOT353
195
(Note 4)
430
oC/W
Thermal
θJC
Resistance
Junction-to-
Case
SOT25
SOT353
58
(Note 4)
155
oC/W
Note: 4. Test conditions for SOT25, and SOT353: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
74AHC1G125
Document number: DS35176 Rev. 1 - 2
4 of 9
www.diodes.com
March 2011
© Diodes Incorporated
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