Philips Semiconductors
74LVC1G57
Low-power configurable multiple function gate
Table 7: Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to
GND (ground = 0 V).
Symbol Parameter
Conditions
Min Max
Unit
ICC, IGND
Tstg
Ptot
VCC or GND current
storage temperature
power dissipation
Tamb = −40 °C to +125 °C
-
±100
mA
−65 +150
°C
-
300
mW
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] When VCC = 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
10. Recommended operating conditions
Table 8:
Symbol
VCC
VI
VO
Tamb
Recommended operating conditions
Parameter
Conditions
supply voltage
input voltage
output voltage
active mode
VCC = 0 V; Power-down
mode
operating ambient
temperature
Min Typ Max Unit
1.65 - 5.5 V
0
- 5.5 V
0
-
VCC V
0
- 5.5 V
−40 - +125 °C
11. Static characteristics
Table 9: Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max Unit
Tamb = −40 °C to +85 °C [1]
VOL
LOW-level output voltage VI = VCC or GND
IO = 100 µA; VCC = 1.65 V to 5.5 V
IO = 4 mA; VCC = 1.65 V
IO = 8 mA; VCC = 2.3 V
IO = 12 mA; VCC = 2.7 V
IO = 24 mA; VCC = 3.0 V
IO = 32 mA; VCC = 4.5 V
VOH
HIGH-level output voltage VI = VCC or GND
IO = −100 µA; VCC = 1.65 V to 5.5 V
IO = −4 mA; VCC = 1.65 V
IO = −8 mA; VCC = 2.3 V
IO = −12 mA; VCC = 2.7 V
IO = −24 mA; VCC = 3.0 V
IO = −32 mA; VCC = 4.5 V
ILI
input leakage current
VI = 5.5 V or GND; VCC = 3.6 V
-
-
0.1
V
-
-
0.45 V
-
-
0.3
V
-
-
0.4
V
-
-
0.55 V
-
-
0.55 V
VCC − 0.1 -
-
V
1.2
-
-
V
1.9
-
-
V
2.2
-
-
V
2.3
-
-
V
3.8
-
-
V
-
±0.1 ±5
µA
9397 750 13722
Product data sheet
Rev. 01 — 6 September 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
6 of 18