STPS3150 查看數據表（PDF） - STMicroelectronics
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STPS3150 Datasheet PDF : 10 Pages
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Characteristics
STPS3150
Figure 9.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (SMB)
Zth(j-a)/Rth(j-a)
1.0
SMB
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-02
1.E-01
tp(s)
1.E+00
1.E+01
T
δ=tp/T
1.E+02
tp
1.E+03
Figure 10. Relative variation of thermal
impedance junction to ambient
versus pulse duration (DO-2001AD)
Zth(j-a)/Rth(j-a)
1.0
DO-201AD
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-01
1.E+00
tp(s)
1.E+01
T
δ=tp/T
1.E+02
tp
1.E+03
Figure 11. Relative variation of thermal
impedance junction to lead
versus pulse duration - SMB flat
Zth(j-l)/Rth(j-l)
1.0
SMB flat
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-04
1.E-03
tp(s)
1.E-02
1.E-01
1.E+00
1.E+01
Figure 12. Reverse leakage current versus
reverse voltage applied (typical
values)
IR(µA)
1.E+04
1.E+03
1.E+02
1.E+01
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
1.E+00
Tj=50°C
1.E-01
1.E-02
0
Tj=25°C
VR(V)
25
50
75
100
125
150
Figure 13. Junction capacitance versus
reverse voltage applied (typical
values)
C(pF)
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
100
Figure 14. Forward voltage drop versus
forward current
IFM(A)
100
10
Tj=125°C
(maximum values)
Tj=125°C
(typical values)
Tj=25°C
(maximum values)
10
1
VR(V)
10
100
1000
VFM(V)
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
4/10
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