AO4420 查看數據表（PDF） - Alpha and Omega Semiconductor
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AO4420 Datasheet PDF : 4 Pages
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AO4420
30V N-Channel MOSFET
General Description
The AO4420 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity
and body diode characteristics. This device is
suitable for use as a synchronous switch in PWM
applications.
Product Summary
VDS (V) = 30V
ID = 13.7A (VGS = 10V)
RDS(ON) < 10.5mΩ (VGS = 10V)
RDS(ON) < 12mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
D
Top View
Bottom View
D
D
D
D
G
S
S
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
ID
Pulsed Drain Current B
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
13.7
9.7
60
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
28
54
40
75
Maximum Junction-to-Lead C
Steady-State
RθJL
21
30
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
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