AO4420 查看數據表（PDF） - Alpha and Omega Semiconductor

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AO4420

30V N-Channel MOSFET

Alpha and Omega Semiconductor 

AO4420

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS

IDSS

IGSS

VGS(th)

ID(ON)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

RDS(ON) Static Drain-Source On-Resistance

ID=250µA, VGS=0V

30

V

VDS=24V, VGS=0V

TJ=55°C

0.004 1

µA

5

VDS=0V, VGS= ±12V

100 nA

VDS=VGS ID=250µA

0.6 1.1

2

V

VGS=4.5V, VDS=5V

40

A

VGS=10V, ID=13.7A

TJ=125°C

8.3 10.5

mΩ

12.5 15

VGS=4.5V, ID=12.7A

9.7 12 mΩ

gFS

Forward Transconductance

VSD

Diode Forward Voltage

VDS=5V, ID=13.7A

IS=1A,VGS=0V

30

37

S

0.76 1

V

IS

Maximum Body-Diode Continuous Current

5

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

VGS=0V, VDS=15V, f=1MHz

3656 4050 pF

256

pF

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=0V, f=1MHz

168

pF

0.86 1.1

Ω

SWITCHING PARAMETERS

Qg(4.5V) Total Gate Charge

Qgs

Gate Source Charge

VGS=4.5V, VDS=15V, ID=13.7A

30.5 36 nC

4.6

nC

Qgd

Gate Drain Charge

8.6

nC

tD(on)

tr

tD(off)

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=15V, RL=1.1Ω,

RGEN=3Ω

5.5

9

ns

3.4

7

ns

49.8 75

ns

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time IF=13.7A, dI/dt=100A/µs

Qrr

Body Diode Reverse Recovery Charge IF=13.7A, dI/dt=100A/µs

5.9 11

ns

22.5 28

ns

12.5 16 nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The

value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance

rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

curve provides a single pulse rating.

Rev 8 : Nov 2010

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

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