AOD4180 查看數據表（PDF） - Alpha and Omega Semiconductor
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AOD4180 Datasheet PDF : 7 Pages
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AOD4180
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3000
VDS=40V
8
ID=20A
6
4
2
2500
2000
1500
1000
500
Ciss
Coss
Crss
0
0
5
10 15 20 25 30 35
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
0 10 20 30 40 50 60 70 80
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
0.1
RDS(ON)
limited
DC
TJ(Max)=175°C
TC=25°C
10µs10µs
100µs
1ms
10ms
0.0
0.01
0.1
1
10
100 1000
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
2000
1600
1200
800
400
TJ(Max)=175°C
TC=25°C
17
5
2
10
0
0.0001 0.001 0.01
0.1
1
10
0
Figure
10:
Single
Pulse
Pulse
Width (s)
Power Rating
1J8unction-to-
Case (Note F)
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=1°C/W
In descending order
40 D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: May 2010
www.aosmd.com
Page 4 of 7
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