AOD422 查看數據表（PDF） - Unspecified
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AOD422 Datasheet PDF : 4 Pages
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AOD422, AOD422L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
20
V
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=16V, VGS=0V
VDS=0V, VGS=±4.5V
VDS=0V, VGS=±8V
TJ=55°C
1
µA
5
±1
µA
±10 µA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
0.4 0.6
1
V
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
30
A
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=10A
VGS=2.5V, ID=8A
VGS=1.8V, ID=5A
TJ=125°C
18
22
mΩ
25
31
21
26 mΩ
26
34 mΩ
gFS
Forward Transconductance
VDS=5V, ID=10A
30
S
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous CurrentG
0.76 1
V
10
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1160
pF
187
pF
146
pF
1.5
Ω
SWITCHING PARAMETERS
Qg
Total Gate Charge
16
nC
Qgs
Gate Source Charge
VGS=4.5V, VDS=10V, ID=10A
0.8
nC
Qgd
Gate Drain Charge
3.8
nC
tD(on)
Turn-On DelayTime
6.2
ns
tr
Turn-On Rise Time
VGS=5V, VDS=10V, RL=1Ω,
12.7
ns
tD(off)
Turn-Off DelayTime
RGEN=3Ω
51.7
ns
tf
Turn-Off Fall Time
16
ns
trr
Body Diode Reverse Recovery Time IF=10A, dI/dt=100A/µs
17.6
ns
Qrr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs
6.5
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
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