AOT12N60FD/AOTF12N60FD
600V, 12A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
RθJC=0.45°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT12N60FD (Note F)
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF12N60FD (Note F)
15
10
5
0
-5
-10
-15
-20
-600
AOT(F)12N60FD
VDS=100V
IF=12A
dI/dt=100A/µs
AOT(F)12N60
-300
0
300
600
Trr (nS)
Figure 14: Diode Recovery Characteristics
900
1200
5/6
www.freescale.net.cn