APM2095PU 查看數據表（PDF） - Anpec Electronics

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产品描述 (功能)

生产厂家

APM2095PU

P-Channel Enhancement Mode MOSFET

Anpec Electronics 

APM2095P

Typical Characteristics

Source-Drain Diode Forward Voltage

20

10

T =150oC

j

T =25oC

j

1

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

-VSD -Source-to-Drain Voltage (V)

Single Pulse Power

300

Mounted on 1 in2 pad

T =25OC

250

A

200

150

100

50

0

1E-4 1E-3 0.01 0.1 1

Time (sec)

10 100300

Normalized Thermal Transient Impedence, Junction to Ambient

2

1

Duty Cycle=0.5

D=0.2

D=0.1

0.1 D=0.05

D=0.02

D=0.01

0.01

SINGLE PULSE

1E-3

1E-4

1E-3

PDM

t1

t2

0.01

0.1

1.Duty Cycle, D= t1/t2

2.Per Unit Base=R =50oC/W

thJA

3.T -T =P Z

JM A DM thJA

4.Surface Mounted

1

10

100 300

Square Wave Pulse Duration (sec)

Copyright  ANPEC Electronics Corp.

5

Rev. A.1 - Nov., 2003

www.anpec.com.tw

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