BA4560F(2014) 查看數據表（PDF） - ROHM Semiconductor
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BA4560F Datasheet PDF : 52 Pages
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BA4560xxx BA4560Rxxx BA4564RFV BA4564WFV
Datasheet
Electrical Characteristics
○BA4560xxx (Unless otherwise specified VCC=+15V, VEE=-15V)
Parameter
Symbol
Temperature
Range
Min
Limits
Unit
Typ Max
Condition
Input Offset Voltage (Note 9)
VIO
25℃
-
0.5
6 mV VOUT=0V
Input Offset Current (Note 9)
IIO
25℃
-
5
200 nA VOUT=0V
Input Bias Current (Note 10)
IB
Supply Current
ICC
Maximum Output Voltage
VOM
Large Signal Voltage Gain
AV
Input Common-mode Voltage Range VICM
25℃
25℃
25℃
25℃
25℃
25℃
-
50 500 nA VOUT=0V
-
4
7.5
mA
RL=∞, All Op-Amps,
VIN+=0V
±12 ±14
-
V RL≥ 10kΩ
±10 ±13
-
RL≥ 2kΩ
86 100
-
dB
RL≥ 2kΩ, VOUT=±10V
VICM=0V
±12 ±14
-
V
-
Common-mode Rejection Ratio
CMRR
25℃
70 90
-
dB VICM=-12V～+12V
Power Supply Rejection Ratio
Slew Rate
Unity Gain Frequency
PSRR
SR
fT
25℃ 76.3 90
25℃
-
4
25℃
-
4
-
dB RI≤ 10kΩ
-
V/μs
AV=0dB, RL=2kΩ
CL=100pF
- MHz RL=2kΩ
Gain Band Width
GBW
25℃
-
10
- MHz f=10kHz
Total Harmonic Distortion+Noise THD+N 25℃
- 0.003 -
%
AV=20dB, RL=2kΩ
VIN=0.05Vrms, f=1kHz
Input Referred Noise Voltage
-
8
-
nV/ Hz
RS=100Ω, VI=0V
f=1kHz
VN
25℃
-
-
2.2
μVrms
RS=2.2Ω, RIAA
BW=10kHz to 30kHz
(Note 9) Absolute value
(Note 10) Current direction: Since first input stage is composed with PNP transistor, input bias current flows out of IC.
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TSZ02201-0RAR1G200020-1-2
19.Nov.2014 Rev.003
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