BA592WS 查看數據表（PDF） - Semtech Electronics LTD.

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BA592WS

SILICON RF SWITCHING DIODE

Semtech Electronics LTD. 

BA592WS

SILICON RF SWITCHING DIODE

Features

• Very low forward resistance

• Small capacitance

Applications

• For band switching in TV/VTR

tuners and mobile applications

Absolute Maximum Ratings (Ta = 25 OC)

Parameter

Diode Reverse Voltage

Forward Current

Junction Temperature

Operating Temperature Range

Storage Temperature Range

Electrical Characteristics at Ta = 25 OC

Parameter

Reverse Current

at VR = 20 V

Forward Voltage

at IF = 100 mA

Diode Capacitance

at VR = 1 V, f = 1 MHz

at VR = 3 V, f = 1 MHz

Reverse Parallel Resistance

at VR = 0 V, f = 100 MHz

Forward Resistance

at IF = 3 mA, f = 100 MHz

at IF = 10 mA, f = 100 MHz

Series Inductance

PINNING

PIN

1

2

DESCRIPTION

Cathode

Anode

1

2

W4

Top View

Marking Code: "W4"

Simplified outline SOD-323 and symbol

Symbol

Value

Unit

VR

35

V

IF

100

mA

TJ

150

OC

Top

- 55 to + 125

OC

Tstg

- 55 to + 150

OC

Symbol Min. Typ. Max. Unit

IR

-

-

20

nA

VF

-

-

1

V

CT

0.65

-

0.6

-

1.4

pF

1.1

RP

-

100

-

KΩ

rf

-

-

0.7

Ω

-

-

0.5

Ls

-

1.8

-

nH

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

®

Dated : 01/09/2006

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