NXP Semiconductors
BAP50LX
Silicon PIN diode
0
ISL
(dB)
−5
−10
001aag631
0
Lins
(dB)
−1
−2
001aag632
(1)
(2)
(3)
−15
−3
−20
−4
−25
500
1000
1500
2000
2500 3000
f (MHz)
Tamb = 25 °C
Diode zero biased and inserted in series with a 50 Ω
stripline circuit.
Fig 3. Isolation of the diode in off-state as a function
of frequency; typical values
−5
500
1000
1500
2000
2500 3000
f (MHz)
Tamb = 25 °C
(1) IF = 10 mA
(2) IF = 1 mA
(3) IF = 0.5 mA
Diode inserted in series with a 50 Ω stripline circuit
and biased via the analyzer Tee network.
Fig 4. Insertion loss of the diode as a function of
frequency; typical values
BAP50LX_1
Product data sheet
Rev. 01 — 17 July 2007
© NXP B.V. 2007. All rights reserved.
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