BAW56-V(2006) 查看數據表（PDF） - Vishay Semiconductors
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BAW56-V Datasheet PDF : 5 Pages
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BAW56-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambiant air
Junction temperature
Test condition
Storage temperature range
1) Device on fiberglass substrate, see layout
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
VR = 70 V
VR = 70 V, Tj = 150 °C
VR = 25 V, Tj = 150 °C
VF = VR = 0, f = 1 MHz
IF = 10 mA to IR = 1 mA,
VR = 6 V, RL = 100 Ω
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1000
100
Tj = 100 °C
10
1
25 °C
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
14356
VF - Forward Voltage (V)
Figure 1. Forward Current vs. Forward Voltage
Symbol
Value
Unit
RthJA
430
K/W
Tj
150
°C
Tstg
- 65 to + 150
°C
Symbol
Min
VF
VF
VF
VF
IR
IR
IR
Ctot
trr
Typ.
Max
Unit
715
mV
855
mV
1000
mV
1250
mV
2.5
µA
100
µA
30
µA
2
pF
6
ns
Figure 2. Peak forward current IFM = f (tp)
www.vishay.com
2
Document Number 85549
Rev. 1.7, 09-Mar-06
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