BDT65A 查看數據表（PDF） - Inchange Semiconductor
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BDT65A Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDT65/A/B/C
DESCRIPTION
·Collector Current -IC= 12A
·High DC Current Gain-hFE= 1000(Min)@ IC= 5A
·Complement to Type BDT64/A/B/C
APPLICATIONS
·Designed for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT65
60
VCER
Collector-Emitter
Voltage
BDT65A
80
V
BDT65B
100
BDT65C
120
BDT65
60
VCEO
Collector-Emitter
Voltage
BDT65A
80
V
BDT65B
100
BDT65C
120
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
20
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.5
A
125
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1 ℃/W
isc Website：www.iscsemi.cn
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