BDW63A 查看數據表（PDF） - Inchange Semiconductor
零件编号
产品描述 (功能)
生产厂家
BDW63A Datasheet PDF : 2 Pages
| |||
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDW63/A/B/C/D
DESCRIPTION
·Collector Current -IC= 6A
·High DC Current Gain-hFE= 750(Min.)@ IC= 2A
·Complement to Type BDW64/A/B/C/D
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDW63
45
VCBO
Collector-Base
Voltage
BDW63A
60
BDW63B
80
BDW63C
100
BDW63D
120
BDW63
45
VCEO
Collector-Emitter
Voltage
BDW63A
60
BDW63B
80
BDW63C
100
BDW63D
120
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
6
IBB
Base Current-Continuous
0.1
Collector Power Dissipation
PC
@ Ta=25℃
Collector Power Dissipation
@ TC=25℃
2
60
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-c
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
MAX
2.08
62.5
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
Share Link: 