BDW41 查看數據表（PDF） - Inchange Semiconductor

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BDW41

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

BDW41

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 80V(Min)

·High DC Current Gain

: hFE= 1000(Min) @IC= 5A

·Low Collector Saturation Voltage

: VCE(sat)= 2.0V(Max.)@ IC= 5.0A

= 3.0V(Max.)@ IC= 10A

·Complement to Type BDW46

APPLICATIONS

·Designed for general purpose and low speed switching

applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

15

A

IBB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

0.5

A

85

W

150

℃

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

1.47 ℃/W

isc Website：www.iscsemi.cn

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