BF1204 查看數據表（PDF） - NXP Semiconductors.
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BF1204 Datasheet PDF : 13 Pages
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NXP Semiconductors
Dual N-channel dual gate MOS-FET
Product specification
BF1204
handbook, full pagewidth
VAGC
R1
10 kΩ
C1
4.7 nF
RGEN
50 Ω
VI
C2
R2
50 Ω
4.7 nF
RG1
VGG
C3
4.7 nF
DUT
L1
≈ 2.2 μH
C4
RL
50 Ω
4.7 nF
VDS
MGS315
Fig.19 Cross-modulation test set-up (for one MOS-FET).
Scattering parameters
VDS = 5 V; VG2-S = 4 V; ID = 12 mA; Tamb = 25 C.
f
(MHz)
s11
MAGNITUDE
(ratio)
ANGLE
(deg)
s21
MAGNITUDE
(ratio)
50
0.991
3.29
2.95
100
0.987
7.12
2.90
200
0.981
14.21
2.86
300
0.969
21.22
2.83
400
0.958
28.14
2.79
500
0.939
35.01
2.74
600
0.921
41.75
2.68
700
0.898
48.51
2.62
800
0.874
54.96
2.55
900
0.847
61.62
2.49
1 000
0.817
67.84
2.41
ANGLE
(deg)
175.78
171.61
163.45
155.11
147.37
139.04
131.35
123.38
115.74
107.84
100.24
s12
MAGNITUDE
(ratio)
0.00060
0.00119
0.00234
0.00339
0.00429
0.00508
0.00565
0.00611
0.00646
0.00662
0.00670
ANGLE
(deg)
85.25
84.74
80.85
75.77
72.23
68.24
64.97
61.90
57.77
55.04
52.16
s22
MAGNITUDE
(ratio)
0.995
0.994
0.992
0.989
0.987
0.983
0.981
0.976
0.973
0.969
0.966
ANGLE
(deg)
1.44
2.90
5.70
8.50
11.25
13.96
16.67
19.36
22.04
24.80
27.45
2010 Sep 16
9
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