BF1208 查看數據表（PDF） - NXP Semiconductors.
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BF1208 Datasheet PDF : 23 Pages
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NXP Semiconductors
BF1208
Dual N-channel dual gate MOSFET
102
bis, gis
(mS)
10
1
10−1
001aac570
bis
gis
102
|yfs|
(mS)
10
001aac571 −102
|yfs|
ϕfs
(deg)
−10
ϕfs
10−2
10
102
103
f (MHz)
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 13 mA
Fig 29. Amplifier B: input admittance as a function of
frequency; typical values
1
−1
10
102
103
f (MHz)
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 13 mA
Fig 30. Amplifier B: forward transfer admittance and
phase as a function of frequency; typical
values
103
|yrs|
(μS)
102
001aac572 −103
ϕrs
(deg)
ϕrs
−102
|yrs|
10
bos, gos
(mS)
1
001aac573
bos
gos
10
−10
10−1
1
−1
10
102
103
f (MHz)
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 13 mA
Fig 31. Amplifier B: reverse transfer admittance and
phase as a function of frequency; typical
values
10−2
10
102
103
f (MHz)
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 13 mA
Fig 32. Amplifier B: output admittance as a function of
frequency; typical values
BF1208
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 7 September 2011
© NXP B.V. 2011. All rights reserved.
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