BF1216 查看數據表（PDF） - NXP Semiconductors.
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BF1216 Datasheet PDF : 17 Pages
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NXP Semiconductors
BF1216
Dual N-channel dual gate MOSFET
102
gis, bis
(mS)
10
1
10−1
001aal595
bis
gis
102
|Yfs|
(mS)
10
|Yfs|
ϕfs
001aal596 −102
ϕfs
(deg)
−10
10−2
10
102
103
f (MHz)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = 0 V; ID(A) = 19 mA;
and vice versa.
Fig 13. Input admittance as a function of frequency;
typical values
103
|Yrs|
(mS)
102
001aal597 −103
ϕrs
(deg)
ϕrs
−102
|Yrs|
10
−10
1
−1
10
102
103
f (MHz)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = 0 V; ID(A) = 19 mA;
and vice versa.
Fig 14. Forward transfer admittance and phase as a
function of frequency; typical values
10
bos, gos
(mS)
001aal598
1
bos
10−1
gos
1
−1
10
102
103
f (MHz)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = 0 V; ID(A) = 19 mA;
and vice versa.
Fig 15. Reverse transfer admittance and phase as a
function of frequency; typical values
10−2
10
102
103
f (MHz)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = 0 V; ID(A) = 19 mA;
and vice versa.
Fig 16. Output admittance as a function of frequency;
typical values
BF1216_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 29 April 2010
© NXP B.V. 2010. All rights reserved.
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