BF1216 查看數據表（PDF） - NXP Semiconductors.
零件编号
产品描述 (功能)
生产厂家
BF1216 Datasheet PDF : 17 Pages
| |||
NXP Semiconductors
BF1216
Dual N-channel dual gate MOSFET
100
IG1
(μA)
80
001aal586
(1)
(2)
(3)
60
(4)
40
20
0
0
(5)
(6)
(7)
0.5
1.0
1.5
2.0
VG1-S (V)
(1) VG2-S = 4.0 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3.0 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2.0 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1.0 V.
VDS = 5 V; Tj = 25 °C.
Fig 4. Gate1 current as a function of gate1 voltage;
typical values
16
ID
(mA)
12
001aal588
30
|Yfs|
(mS)
20
001aal587
(1)
(2)
(3)
(4)
(5)
10
(6)
(7)
0
0
5
10
15
20
25
ID (mA)
(1) VG2-S = 4.0 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3.0 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2.0 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1.0 V.
VDS = 5 V; Tj = 25 °C.
Fig 5. Forward transfer admittance as a function of
drain current; typical values
20
ID
(mA)
15
001aal589
8
10
4
5
0
0
20
40
60
IG1 (μA)
Fig 6.
VDS = 5 V; VG2-S = 4 V; Tj = 25 °C.
Drain current as a function of gate1 current;
typical values
0
0
1
2
3
4
5
VGG (V)
Fig 7.
VDS = 5 V; VG2-S = 4 V; RG1 = 39 kΩ; Tj = 25 °C.
Drain current as a function of gate1 supply
voltage (VGG); typical values
BF1216_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 29 April 2010
© NXP B.V. 2010. All rights reserved.
7 of 17
Share Link: 