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BF1216

Dual N-channel dual gate MOSFET

NXP Semiconductors. 

NXP Semiconductors

BF1216

Dual N-channel dual gate MOSFET

30

ID

(mA)

20

10

001aal590

(1)

(2)

(3)

(4)

(5)

40

ID

(mA)

30

20

10

001aal591

(1)

(2)

(3)

(4)

(5)

0

0

1

2

3

4

5

VGG = GDS (V)

(1) RG1 = 10 kΩ.

(2) RG1 = 20 kΩ.

(3) RG1 = 40 kΩ.

(4) RG1 = 60 kΩ.

(5) RG1 = 80 kΩ.

VG2-S = 4 V; Tj = 25 °C.

Fig 8. Drain current as a function of VDS and VGG;

typical values

0

0

1

2

3

4

5

VG2-S (V)

(1) VGG = 5.0 V.

(2) VGG = 4.5 V.

(3) VGG = 4.0 V.

(4) VGG = 3.5 V.

(5) VGG = 3.0 V.

Tj = 25 °C; RG1 = 39 kΩ (connected to VGG).

Fig 9. Drain current as a function of gate2 voltage;

typical values

BF1216_1

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 01 — 29 April 2010

© NXP B.V. 2010. All rights reserved.

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