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Diodes Incorporated
BFS17N
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 10)
Collector-Emitter Saturation Voltage (Note 10)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
Min Typ Max
20
−
−
11
−
−
3
−
−
−
−
0.5
−
−
0.5
56
−
180
−
−
0.5
Transition Frequency (Note 10)
fT
1.4
3.2
−
Collector Output Capacitance (Note 10)
Cob
−
0.8
1.5
Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
Unit
V
V
V
µA
µA
−
V
GHz
pF
Test Condition
IC = 10µA
IC = 1mA
IE = 10µA
VCB = 10V
VEB = 2V
IC = 5mA, VCE = 10V
IC = 25mA, IB = 5mA
IE = 25mA, VCE = 5V,
f = 500MHz
VCB = 10V, f = 1MHz
BFS17N
Document Number DS32160 Rev. 3 - 2
4 of 7
www.diodes.com
October 2012
© Diodes Incorporated