BLF2022-70 查看數據表（PDF） - Philips Electronics

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BLF2022-70

UHF power LDMOS transistor

Philips Electronics 

Philips Semiconductors

UHF power LDMOS transistor

Product specification

BLF2022-70

handbook, h8alfpage

Zi

(Ω)

6

4

2

0

−2

1.8

2

MLD829

ri

xi

2.2

2.4

f (GHz)

handbook, h4alfpage

ZL

(Ω)

2

0

−2

−4

−6

1.8

2

MLD830

RL

XL

2.2

2.4

f (GHz)

VDS = 28 V; ID = 500 mA; PL = 65 W; Th ≤ 25 °C.

Fig.8 Input impedance as a function of frequency

(series components); typical values.

VDS = 28 V; ID = 500 mA; PL = 65 W; Th ≤ 25 °C.

Fig.9 Load impedance as a function of frequency

(series components); typical values.

handbook, full pagewidth

R1

Vgate

C5

input

50 Ω

C4

L2

L4

L6

L10

L8

C3

L20

L1 L3 L5 L7

L9

C2

C1

F1

R2

C10 C11 C12

VDD

C13 C14

L13

C9

L11

L15

L17

C8

L12 L14

L16 L18 L19

C6

C7

output

50 Ω

MGS920

2003 Feb 24

Fig.10 Class-AB test circuit at f = 2.2 GHz.

6

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