BLF147 查看數據表（PDF） - NXP Semiconductors.
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BLF147 Datasheet PDF : 15 Pages
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NXP Semiconductors
VHF power MOS transistor
Product specification
BLF147
500
handbook, halfpage
Crs
(pF)
400
MRA902
300
200
100
0
0
10
20
30
40
VDS (V)
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage; typical values.
APPLICATION INFORMATION FOR CLASS-AB OPERATION
RF performance in SSB operation in a common source class-AB circuit.
Th = 25 °C; Rth mb-h = 0.2 K/W; RGS = 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz; unless otherwise specified.
PL
(W)
f
VDS
(MHz)
(V)
IDQ
(A)
Gp
(dB)
ηD
(%)
d3
(dB)
(note 2)
d5
(dB)
(note 2)
20 to 150 (PEP)
28
28
1
>17
>35
<−30
<−30
typ. 19
typ. 40
typ. −34
typ. −40
Notes
1. Optimum load impedance: 2.1 + j0 Ω.
2. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope
power the values should be decreased by 6 dB.
Ruggedness in class-AB operation
The BLF147 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases under the
following conditions: VDS = 28 V; f = 28 MHz at rated load power.
Rev. 06 - 5 December 2006
6 of 15
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