BLW85 查看數據表（PDF） - Philips Electronics
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BLW85 Datasheet PDF : 15 Pages
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Philips Semiconductors
HF/VHF power transistor
Product specification
BLW85
handbook1,0h0alfpage
PL
(W)
75
50
25
MGP617
Th = 25 °C
Th = 70 °C
10
handbook, halfpage
Gp
(dB)
5
MGP618
100
η
(%)
η
Gp
50
0
0
10
20 PS (W) 30
Fig.9 Typical values; f = 175 MHz;
VCE = 12,5 V; - - - VCE = 13,5 V.
0
0
10
30
PL (W)
50
Fig.10 Typical values; f = 175 MHz ;Th = 25 °C;
VCE = 12,5 V; - - - VCE = 13,5 V.
60
handbook, halfpage
PLnom
(W)
(VSWR = 1)
50
MGP619
VSWR =
4
5
40
30
1
10
20
50
PS
PSnom
1.1
1.2 VCE 1.3
VCEnom
Fig.11 R.F. SOAR; (short-time operation during
mismatch); f = 175 MHz; Th = 70 °C;
Rth mb-h = 0,3 K/W ;
VCEnom = 12,5 V or 13,5 V; PS = PSnom at
VCEnom and VSWR =1 measured in the
circuit of Fig.7.
The transistor has been developed for use with
unstabilized supply voltages. As the output power and
drive power increase with the supply voltage, the nominal
output power must be derated in accordance with the
graph for safe operation at supply voltages other than the
nominal. The graph shows the permissible output power
under nominal conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio with VSWR as
parameter.
The graph applies to the situation in which the drive
(PS/PSnom) increases linearly with supply over-voltage
ratio.
March 1993
8
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