BSP135(2003) 查看數據表（PDF） - Infineon Technologies

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BSP135
(Rev.:2003)

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

Parameter

Thermal characteristics

Thermal resistance,

junction - soldering point (pin 4)

SMD version, device on PCB

Symbol Conditions

BSP135

min.

Values

typ.

Unit

max.

R thJS

-

R thJA minimal footprint

-

6 cm2 cooling area1)

-

-

25 K/W

-

115

-

70

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Drain-source cutoff current

Gate-source leakage current

On-state drain current

Drain-source on-state resistance

Transconductance

V (BR)DSS V GS=-3 V, I D=250 µA

V GS(th) V DS=3 V, I D=94 µA

I D(off)

V DS=600 V,

V GS=-3 V, T j=25 °C

V DS=600 V,

V GS=-3 V, T j=125 °C

I GSS

V GS=20 V, V DS=0 V

I DSS

V GS=0 V, V DS=10 V

R DS(on) V GS=0 V, I D=0.01A

V GS=10 V, I D=0.12 A

g fs

|V DS|>2|I D|R DS(on)max,

I D=0.1 A

600

-2.1

-

-

-

20

-

-

0.08

-

-1.4

-

-

-

-

30

25

0.16

-V

-1

0.1 µA

10

100 nA

- mA

60 Ω

45

-S

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (single layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 1.0

page 2

2003-04-03

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