BSP613P(2004) 查看數據表（PDF） - Infineon Technologies
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BSP613P Datasheet PDF : 8 Pages
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13 Typ. avalanche energy
EAS = f (Tj)
par.: ID = 2.9 A , VDD = -25 V, RGS = 25 Ω
160
mJ
BSP613P
14 Typ. gate charge
VGS = f (QG), parameter: VDS ; Tj = 25 °C
ID = 2.9 A pulsed;
BSP613P
16
V
120
100
80
60
40
20
0
25 45 65 85 105 125 ºC 165
Tj
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
12
10
0.2 VDS max
8 0.8 VDS max
6
4
2
0
0 4 8 12 16 20 24 28 nC 34
|QG |
BSP613P
-72
V
-68
-66
-64
-62
-60
-58
-56
-54
-60 -20
20
60
100 °C
180
Tj
Page 7
2004-06-02
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